Fabricant |
No de pièce |
Fiches technique Date Size |
Description |
Rohs Pb Free Lifecycle |
Site Internet |
NXP Semiconductors
|
BAS29
|
|
0.25A, 110V, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3
|
compliant yes transferred |
|
ON Semiconductor
|
BAS29
|
|
General Purpose High Voltage Diode, 3000-REEL
|
yes active |
|
BAS29
|
|
General Purpose High Voltage Diode, 3000-REEL
|
yes active |
|
NXP Semiconductors
|
BAS29 T/R
|
|
General purpose controlled avalanche (double) diodes - Cd max.: 35 pF; Configuration: single ; IF max: 250 mA; IFSM max: 10 A; IR max: 100@VR=90V nA; IFRM: 600 mA; trr max: 50 ns; VFmax: 1@
|
compliant no active |
|
BAS29,215
|
|
BAS29; BAS31; BAS35 - General purpose controlled avalanche (double) diodes TO-236 3-Pin
|
compliant
transferred |
|
Nexperia
|
BAS29,215
|
|
BAS29; BAS31; BAS35 - General purpose controlled avalanche (double) diodes TO-236 3-Pin
|
active |
|
BAS29,215
|
|
BAS29; BAS31; BAS35 - General purpose controlled avalanche (double) diodes TO-236 3-Pin
|
active |
|
NXP Semiconductors
|
BAS29T/R
|
|
DIODE 0.25 A, 110 V, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode
|
compliant unknown transferred |
|